BUK9611-55A,118 N-Channel MOSFET rated at 55V drain-source voltage and 75A continuous drain current. Features low on-resistance of 10 mΩ at 10V gate drive and is housed in a D2PAK surface-mount package.
Mfr Part #:

BUK9611-55A,118

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
N-Channel MOSFET rated at 55V drain-source voltage and 75A continuous drain current. Features low on-resistance of 10 mΩ at 10V gate drive and is housed in a D2PAK surface-mount package.
✓ Total Stock: 2,800 pcs

BUK9611-55A,118 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,800 pcs
2800 pcs On Request 1 On Request On Request On Request On Request On Request

BUK9611-55A,118 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BUK9611-55A,118 Description

Short technical summary and product information.

The BUK9611-55A,118 is an N-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOS technology, designed and qualified to AEC Q101 for automotive critical applications. It offers a drain-source voltage of 55V and continuous drain current of 75A, with a maximum power dissipation of 166W. The device features low conduction losses with a typical on-state resistance of 8 mΩ at 10V gate drive, and is suitable for logic level gate drive sources (4.5V).

 

Key electrical characteristics include a maximum input capacitance of 4230 pF at 25V, gate threshold voltage of 2V at 1mA, and an avalanche energy rating of 330 mJ. The operating junction temperature range is -55°C to 175°C, making it suitable for thermally demanding environments.

 

The MOSFET is supplied in a TO-263-3 (D2PAK) surface-mount package, which is ideal for automated assembly. Typical applications include 12V and 24V loads, automotive and general purpose power switching, and driving motors, lamps, and solenoids.

BUK9611-55A,118 Quick Information

Product Type: MOSFET
Series: TrenchMOS
Canonical Name: BUK9611-55A,118 N-Channel TrenchMOS MOSFET
Subcategory: N-Channel Power MOSFET

BUK9611-55A,118 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BUK9611-55A,118 Features

  • 55V drain-source voltage rating.
  • 75A continuous drain current.
  • Low on-resistance of 10 mΩ.
  • Logic level gate drive (4.5V).
  • AEC Q101 qualified for automotive.

BUK9611-55A,118 Applications

  • 12V and 24V automotive loads.
  • Motor, lamp, and solenoid switching.
  • General purpose power switching.
  • Suitable for thermally demanding environments.

BUK9611-55A,118 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BUK9611-55A,118?

The drain-source voltage (Vdss) is 55V.

What is the maximum continuous drain current?

The maximum continuous drain current is 75A at VGS=5V and Tmb=25°C.

What is the on-resistance at 10V gate drive?

The maximum on-resistance is 10 mΩ at ID=25A, VGS=10V, Tj=25°C. Typical value is 8 mΩ.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the BUK9611-55A,118 available in?

It is available in a TO-263-3 (D2PAK) surface-mount package.

Is the BUK9611-55A,118 RoHS compliant?

The product is listed as RoHS3 compliant, but this status is unverified.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2V at ID=1mA.

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