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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUK9608-55 from NXP Semiconductors is a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. This component is designed for automotive critical applications and is qualified to the appropriate AEC standard.
Key electrical characteristics include a drain-to-source voltage of 55V, a continuous drain current of 75A, and a low on-state resistance of 7 mOhm. The FET is housed in a TO-263-3 package, suitable for surface mount applications.
This product is designed for automotive systems and other applications requiring efficient switching and power handling. Its logic-level gate drive makes it compatible with a wide range of control signals.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.76 | $1.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 55V.
The continuous drain current is 75A.
The on-state resistance is 7 mOhm.
The BUK9608-55 is in a TO-263-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.