| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
76 pcs
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76 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Vgs(th) (Max) @ Id |
The BUK9575-100A from NXP Semiconductors is a high-performance N-Channel MOSFET. It is designed with a drain-to-source voltage (Vdss) of 100V and can handle a continuous drain current (Id) of 23A at 25°C.
This MOSFET offers a low on-resistance (Rds On) of a maximum of 72 mOhm at 10A and 10V gate-source voltage, making it suitable for efficient power switching applications. The gate threshold voltage (Vgs(th)) is typically 2V at 1mA.
Packaged in a standard TO-220AB through-hole configuration, the BUK9575-100A is designed for easy mounting and integration into electronic circuits. Its maximum power dissipation is rated at 98W.
This component belongs to the TrenchMOS™ family and is classified as a Logic Level Gate FET, indicating its suitability for low-voltage gate drive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100V.
The continuous drain current (Id) is 23A at 25°C case temperature.
The maximum on-resistance (Rds(on)) is 72 mOhm at 10A drain current and 10V gate drive.
The BUK9575-100A is offered in a TO-220-3 through-hole package (supplier device package TO-220AB).
The maximum gate threshold voltage (Vgs(th)) is 2V at 1mA drain current.
The input capacitance (Ciss) is 1704pF measured at 25V drain-source voltage.