| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
45 pcs
|
45 pcs | On Request | 1 | On Request | On Request | 0706+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| SVHC Present | |
| Tape & Reel |
The BUK92150-55A from NXP Semiconductors is a logic level N-channel TrenchMOS FET designed for automotive critical applications and general purpose power switching. This device is suitable for 12 V and 24 V loads, including motors, lamps, and solenoids.
Key electrical specifications include a drain-source voltage of up to 55 V and a continuous drain current of 11 A at 25 °C. The FET exhibits low on-state resistance, with typical values of 97 mOhm at VGS = 10 V and 120 mOhm at VGS = 5 V, both measured at 25 °C. It is also rated for high temperatures, with an on-state resistance of 280 mOhm at 175 °C.
The BUK92150-55A is Q101 compliant and suitable for thermally demanding environments due to its 175 °C rating. It is packaged in a DPAK (SOT428) surface-mounted plastic package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 55 V.
The continuous drain current is 11 A.
The typical on-state resistance is 120 mOhm at VGS = 5 V and 25°C.
The device is suitable for operation up to 175 °C.
It is supplied in a DPAK (SOT428) package.
Yes, it is suitable for logic level gate drive sources.