| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
135 pcs
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135 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The Nexperia BUK761R8-30C is an N-Channel MOSFET designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 100A at 25°C. The MOSFET exhibits a maximum on-state resistance (Rds On) of 1.8 mOhm when driven at 10V and carrying 25A.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4V at 1mA and a maximum gate-source voltage (Vgs) of ±20V. The input capacitance (Ciss) is rated at a maximum of 10349pF at 25V. The device has a maximum power dissipation of 333W (Tc).
This MOSFET is housed in a surface-mount D2PAK package (TO-263-3, D²Pak (2 Leads + Tab), TO-263AB). It operates within a temperature range of -55°C to 175°C (TJ). The TrenchMOS™ technology is utilized in its construction.
This component is suitable for various power management and switching circuits where high current handling and low on-resistance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
Surface mount TO-263-3 (D2PAK) package.
-55°C to 175°C (junction).
4V maximum at 1mA.
1.8 mOhm maximum at 25A and 10V gate drive.
100A at 25°C case temperature.
333W at case temperature.