Mfr Part #:

BUK761R6-40E

The NXP Semiconductors BUK761R6-40E is an N-Channel MOSFET with a 40V drain-to-source voltage and a continuous drain current of 120A at 25°C. It is housed in a surface-mount D2PAK package.

✓ Total Stock: 185 pcs

$ Price Range: $2.40

BUK761R6-40E Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	185 pcs On Request	185 pcs	On Request	1	On Request	On Request	20+	On Request	On Request

BUK761R6-40E Description

Short technical summary and product information.

The NXP Semiconductors BUK761R6-40E is a high-performance N-Channel MOSFET designed for various power applications. It features a maximum drain-to-source voltage (Vds) of 40V and can handle a continuous drain current (Id) of 120A at 25°C. The Rds On is specified at a maximum of 1.6 mOhm at 25A and 10V gate-source voltage, indicating low conduction losses.

This MOSFET belongs to the TrenchMOS™ series and utilizes Metal Oxide technology. Key electrical characteristics include a gate charge (Qg) of 145nC at 10V and an input capacitance (Ciss) of 11340pF at 25V. The threshold voltage (Vgs(th)) is a maximum of 4V at 1mA. With a maximum power dissipation of 357W, it is suitable for demanding applications.

The component is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, designed for surface mounting. The packaging is Digi-Reel®, suitable for automated assembly processes. Its robust design and specifications make it a reliable choice for industrial automation and process automation systems.

BUK761R6-40E Quick Information

Product Type: MOSFET

Series: TrenchMOS™

Canonical Name: NXP Semiconductors BUK761R6-40E N-Channel MOSFET

Subcategory: N-Channel

BUK761R6-40E Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BUK761R6-40E Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUK761R6-40E Features

40V drain-to-source voltage rating.
120A continuous drain current capability.
Low 1.6 mOhm Rds On at 25A, 10V.
Surface mount D2PAK package.
TrenchMOS™ N-Channel MOSFET technology.

BUK761R6-40E Applications

Suitable for power switching circuits.
Ideal for industrial automation systems.
Used in process automation equipment.
High current power management.

BUK761R6-40E FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-to-source voltage for the BUK761R6-40E?

The drain-to-source voltage (Vds) for the BUK761R6-40E is 40V.

What is the continuous drain current of the BUK761R6-40E at 25°C?

The continuous drain current (Id) at 25°C for the BUK761R6-40E is 120A.

What is the maximum Rds On for the BUK761R6-40E?

The maximum Rds On for the BUK761R6-40E is 1.6 mOhm when tested at 25A and 10V.

How is the BUK761R6-40E MOSFET packaged?

The BUK761R6-40E is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, suitable for surface mounting.

What type of MOSFET is the BUK761R6-40E?

The BUK761R6-40E is a MOSFET N-Channel, Metal Oxide type.

What is the series of the BUK761R6-40E?

The BUK761R6-40E belongs to the TrenchMOS™ series.

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