| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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225 pcs
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225 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The NXP Semiconductors BUK7613-60E is an N-channel MOSFET utilizing TrenchMOS technology, designed for high-performance automotive applications. This standard level FET features a drain-source voltage of up to 60V and a continuous drain current of 58A at 25°C.
Key electrical characteristics include a maximum drain-source on-state resistance of 13 mΩ at 15A and 25°C, and a gate-drain charge of 6.9 nC. The device is rated for a maximum junction temperature of 175°C, making it suitable for thermally demanding environments.
The BUK7613-60E is supplied in a D2PAK (SOT404) surface-mount package. Its design and qualification to AEC Q101 standard highlight its suitability for automotive systems, including motor, lamp, and solenoid control, as well as start-stop micro-hybrid applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
D2PAK (TO-263) surface-mount package.
-55°C to 175°C junction temperature.
58A at 25°C case temperature with VGS=10V.
13mΩ maximum at VGS=10V and ID=15A.
6.9 nC typical at ID=15A, VDS=48V, VGS=10V.
96W at 25°C case temperature.