| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,333 pcs
|
3333 pcs | On Request | 1 | On Request | On Request | 1619+ | On Request | On Request | |
|
254 pcs
|
254 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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| Tape & Reel |
The NXP Semiconductors BUK7610-100B is an N-channel TrenchMOS standard level FET designed for automotive critical applications. This device offers low conduction losses due to its low on-state resistance, with a typical RDS(on) of 8.6 mΩ at 25°C and 25A.
Key electrical characteristics include a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 75A at 25°C. The FET is suitable for standard level gate drive sources and can handle thermally demanding environments with a 175°C rating.
Applications for the BUK7610-100B include 12V, 24V, and 42V loads, general purpose power switching, and driving motors, lamps, and solenoids. It is qualified to AEC standards for automotive use.
The component is housed in a D2PAK plastic package suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.76 | $1.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The continuous drain current is 75 A at 25°C.
The typical on-state resistance is 8.6 mΩ.
The BUK7610-100B is available in a D2PAK package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.
