| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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350 pcs
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350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUK7535-55 from NXP Semiconductors is an N-channel TrenchMOS FET designed for robust performance in automotive and general-purpose switching applications. This device features a breakdown voltage of 55V and a low maximum on-state resistance of 35mΩ, ensuring efficient power handling.
With integral zener diodes providing ESD protection up to 2kV, the BUK7535-55 is built for reliability. It operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 85W. The FET is housed in a standard TO-220AB package, making it suitable for through-hole mounting.
Key electrical characteristics include an input capacitance of 872pF, a rise time of 62ns, and a fall time of 20ns. These specifications make the BUK7535-55 a suitable component for various switching circuits where dependable performance is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the BUK7535-55 is 55V.
The maximum on-state resistance for the BUK7535-55 is 35mΩ.
The BUK7535-55 comes in a TO-220AB package.
The maximum operating temperature for the BUK7535-55 is 175°C.
The minimum operating temperature for the BUK7535-55 is -55°C.