BUK7506-55B,127 MOSFET N-CH 55V 75A TO220AB. This N-channel TrenchMOS MOSFET from NXP is designed for automotive and general power switching applications.
Mfr Part #:

BUK7506-55B,127

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
MOSFET N-CH 55V 75A TO220AB. This N-channel TrenchMOS MOSFET from NXP is designed for automotive and general power switching applications.
✓ Total Stock: 24 pcs
$ Price Range: $0.99

BUK7506-55B,127 Available from 1 distributor

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✓ Non-Authorised
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24 pcs
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BUK7506-55B,127 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BUK7506-55B,127 Description

Short technical summary and product information.

The BUK7506-55B,127 is an N-channel enhancement mode MOSFET using TrenchMOS technology, manufactured by NXP Semiconductors. It features a maximum drain-source voltage of 55V and a continuous drain current of 75A at 25°C case temperature. The device has a low on-state resistance of 6 mΩ maximum at 25A and 10V gate drive, with a typical value of 5.16 mΩ.

 

This MOSFET is suitable for 12V and 24V automotive loads, general purpose power switching, and driving motors, lamps, and solenoids. It is Q101 compliant for automotive applications and can operate in thermally demanding environments with a junction temperature range of -55°C to 175°C. The standard level gate drive (10V recommended) simplifies design.

 

The part is packaged in a TO-220-3 (TO-220AB) through-hole package, suitable for board-level power applications. The device also offers an avalanche energy rating of 680 mJ (single pulse) and total gate charge of 64 nC at 10V, enabling efficient switching.

BUK7506-55B,127 Quick Information

Product Type: MOSFET
Canonical Name: NXP BUK7506-55B,127 N-Channel TrenchMOS MOSFET
Subcategory: Single MOSFET

BUK7506-55B,127 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected

BUK7506-55B,127 Estimated Pricing

Qty Low High
5,000+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUK7506-55B,127 Features

  • N-channel TrenchMOS MOSFET for low conduction losses.
  • Drain-source voltage rating of 55V maximum.
  • Continuous drain current of 75A at 25°C case temperature.
  • Low on-state resistance of 6mΩ (max) at 25A, 10V.
  • Operating temperature range from -55°C to 175°C.

BUK7506-55B,127 Applications

  • Suitable for 12V and 24V automotive loads.
  • Used in general purpose power switching circuits.
  • Ideal for motor, lamp, and solenoid control.
  • Designed for thermally demanding environments.

BUK7506-55B,127 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BUK7506-55B,127?

The maximum drain-source voltage (Vdss) is 55 V.

What package is the BUK7506-55B,127 available in?

It is available in a TO-220-3 package (TO-220AB) with through-hole mounting.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 175°C.

Is the BUK7506-55B,127 RoHS compliant?

RoHS status is likely RoHS3 compliant, but this is unverified.

What is the maximum continuous drain current?

The maximum continuous drain current is 75 A at 25°C case temperature.

What is the gate threshold voltage of this MOSFET?

The maximum gate threshold voltage is 4 V at 1 mA drain current.

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