| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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250 pcs
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250 pcs | On Request | 1 | On Request | On Request | 1213+ | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 1213+ | On Request | On Request |
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The NXP Semiconductors BUK6C2R1-55C is a MOSFET specifically designed and qualified for high-performance automotive applications. This component features a breakdown voltage of 55V and a maximum on-resistance (RDS(on)) of 2.3mΩ, with a drain-source resistance of 3.7mΩ. It has an input capacitance of 16nF and a total of 6 terminals.
With a maximum power dissipation of 300W, this MOSFET operates within a wide temperature range, from a minimum of -55°C to a maximum of 175°C. The package type is SOT. Its rise time is 206ns and fall time is 190ns.
This part is suitable for demanding automotive environments due to its AEC standard qualification. Its robust specifications make it a reliable choice for power management and switching applications within vehicle systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 55V.
The maximum RDS(on) is 2.3mΩ.
It operates from -55°C to 175°C.
The package type is SOT.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.