| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,300 pcs
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12300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUK583-60A from NXP Semiconductors is an N-Channel Field-Effect Transistor (FET) suitable for automotive and general-purpose switching applications. This device features a breakdown voltage of 60V and a minimum drain-source on-resistance of 100mΩ at a gate-source voltage of 10V. It also exhibits a typical drain-source on-resistance of 24mΩ at VGS=10V and 27mΩ at VGS=4.5V.
The FET has a maximum power dissipation rating of 1.8W and a maximum operating temperature of 150°C. The gate-source threshold voltage typically ranges from 1V to 3V, with a maximum gate-source voltage of ±20V. The device is encapsulated in a SOT223-3 package, designed for surface mounting.
This component is intended for use in applications requiring reliable switching performance. Its specifications make it a versatile choice for various electronic designs within the automotive sector and general industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 60V.
The maximum operating temperature is 150°C.
The device is encapsulated in a SOT223-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.