| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUK555-100B is a logic-level N-channel enhancement mode PowerMOS transistor designed for various switching applications. It is suitable for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and automotive applications.
Key electrical specifications include a maximum drain-source voltage of 100V and a continuous drain current of 25A at 25°C. The drain-source on-state resistance is a low 0.085 Ohms at a gate-source voltage of 5V and a drain current of 13A. The device features a junction temperature rating of 175°C and a total power dissipation of 125W at 25°C.
Packaged in a TO-220AB through-hole package, the BUK555-100B is designed for efficient heat dissipation with a thermal resistance junction-to-mounting base of 1.2 K/W. Its logic-level gate drive makes it suitable for direct interface with microcontrollers and other low-voltage logic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The continuous drain current is 25A at 25°C.
The drain-source on-state resistance is 0.085 Ohms at VGS = 5V and ID = 13A.
The maximum junction temperature is 175°C.
The BUK555-100B is supplied in a TO-220AB package.