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BUK457-600B The NXP Semiconductors BUK457-600B is a Silicon N-MOSFET Transistor. It features a 600V breakdown voltage and a TO220 package.
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BUK457-600B

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Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BUK457-600B is a Silicon N-MOSFET Transistor. It features a 600V breakdown voltage and a TO220 package.
✓ Total Stock: 55 pcs
$ Price Range: $0.99

BUK457-600B Available from 1 distributor

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BUK457-600B Specifications Quick View

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BUK457-600B Description

Short technical summary and product information.

The NXP Semiconductors BUK457-600B is a Silicon N-MOSFET Transistor designed for various electronic applications. It offers a high breakdown voltage of 600V, making it suitable for high-voltage circuits.

 

Key electrical specifications include a maximum power dissipation of 150W and a maximum operating temperature of 150°C. The drain-source resistance (Rds(on)) is specified at 780mΩ typical at VGS = 10V and 1070mΩ typical at VGS = 4.5V. The gate-source voltage (VGS) has a maximum rating of ±20V, and the gate-source threshold voltage (VTH) is typically 3V.

 

This transistor comes in a TO220 package, which is commonly used for through-hole mounting. The part number BUK457-600B is manufactured by NXP Semiconductors, a well-known name in the semiconductor industry.

BUK457-600B Quick Information

Product Type: N-MOSFET Transistor
Canonical Name: NXP Semiconductors BUK457-600B Silicon N-MOSFET Transistor
Subcategory: N-MOSFET

BUK457-600B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUK457-600B Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUK457-600B Features

  • 600V breakdown voltage rating.
  • 150W maximum power dissipation.
  • TO220 package for through-hole mounting.
  • Typical Rds(on) of 780mΩ at 10V.
  • Maximum operating temperature of 150°C.

BUK457-600B Applications

  • Suitable for high-voltage circuits.
  • Used in power switching applications.
  • Component in discrete semiconductor designs.
  • General purpose N-MOSFET applications.

BUK457-600B FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the BUK457-600B?

The breakdown voltage of the BUK457-600B is 600V.

What is the maximum power dissipation of the BUK457-600B?

The maximum power dissipation of the BUK457-600B is 150W.

What package does the BUK457-600B come in?

The BUK457-600B is packaged in a TO220 case.

What is the maximum operating temperature of the BUK457-600B?

The maximum operating temperature of the BUK457-600B is 150°C.

Is the BUK457-600B RoHS compliant?

Yes, the BUK457-600B is RoHS3 compliant.

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