| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUK456-800A from NXP Semiconductors is an N-channel enhancement mode field-effect power transistor. It is housed in a plastic envelope, specifically the TO-220AB package, making it suitable for general-purpose switching applications.
Key electrical specifications include a maximum drain-source voltage of 800V and a maximum continuous drain current of 4A at 25°C. The device also features a maximum total power dissipation of 125W at 25°C and a drain-source on-state resistance of 3Ω. Thermal characteristics include a junction-to-mounting base thermal resistance of 1.0 K/W.
This PowerMOS transistor is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters. Its robust design and high voltage rating make it a reliable component for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 800V.
The maximum continuous drain current at 25°C is 4A.
The maximum power dissipation is 125W.
The package type is TO-220AB.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.