| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The BUK455-50B is a transistor from NXP Semiconductors, designed for special purpose applications. It offers a drain-source breakdown voltage (Vbr DSS) of 50V and a maximum drain current (Id Max) of 38A. The device has a maximum power dissipation (Max. PD) of 125W and operates at a maximum temperature of 150°C.
This transistor comes in a TO220 package, which is a common through-hole mounting type. Its input capacitance (Ciss Max) is 2.0nF, and it has a maximum drain-source on-resistance (R(ds) On) of 45mOhm. The forward transconductance (gfs) ranges from 8.0 to 13.5 S.
Key electrical characteristics include a maximum gate-source breakdown voltage (Vbr GSS) of 30V, a maximum drain-source leakage current (Idss Max) of 10uA, and a rise time (Tr Max) of 90ns. The fall time (t(f) Max) is 130ns. The device is not surface mounted.
This component is suitable for various electronic designs requiring a robust transistor with specific voltage and current handling capabilities. Its specifications make it a reliable choice for power switching and control applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 50V.
The maximum drain current is 38A.
The maximum power dissipation is 125W.
The maximum operating temperature is 150°C.
The BUK455-50B transistor comes in a TO220 package.