| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
250 pcs
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250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The BUK453-60B is a high-performance N-channel MOSFET manufactured by NXP Semiconductors. Designed for switching applications, this component operates in enhancement mode and features a built-in diode.
Key electrical specifications include a maximum continuous drain current (ID) of 20A and a maximum drain-source on-resistance of 0.1 Ohm. The device can operate at temperatures up to 175°C, making it suitable for demanding environments.
Packaged in a through-hole SOT-23 case, the BUK453-60B has 3 terminals and is constructed with a silicon element. Its configuration is single with a built-in diode, and the case connection is the drain.
This MOSFET is suitable for various power switching applications where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating temperature for the BUK453-60B is 175°C.
The maximum drain current (ID) for the BUK453-60B is 20A.
The maximum drain-source on-resistance for the BUK453-60B is 0.1 Ohm.
The BUK453-60B MOSFET is supplied in a SOT-23 case package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.