| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The BUK436-800A is a Silicon N-MOSFET transistor manufactured by NXP Semiconductors. It is designed for applications requiring high voltage and current handling capabilities, featuring a maximum drain-source breakdown voltage of 800V and a continuous drain current of up to 4A.
Key electrical specifications include a maximum power dissipation of 125W, input capacitance of 1.25nF, and a low on-resistance of 3 Ohms. The transistor operates within a temperature range of -55°C to 150°C.
Packaged in a TO218 case, this component is suitable for through-hole mounting. Its robust design makes it a reliable choice for various power switching and amplification circuits where high voltage and moderate current are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 800V.
The maximum continuous drain current is 4A.
The maximum operating temperature is 150°C.
The BUK436-800A is supplied in a TO218 package.
The RoHS status is RoHS3 Compliant.