| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,651 pcs
|
7651 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Junction Temperature | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The BUJD203AD from NXP Semiconductors is a planar passivated NPN power transistor featuring high voltage capability and fast switching speeds. It includes an integrated anti-parallel E-C diode, making it suitable for applications requiring robust performance.
This transistor is housed in a SOT428 (DPAK) surface-mountable plastic package. Key electrical characteristics include a collector-emitter peak voltage of 850V, a continuous collector current of 4A, and a peak collector current of 8A. The device also offers a total power dissipation of 80W at 25°C ambient temperature.
Applications for the BUJD203AD include DC-to-DC converters, electronic lighting ballasts, inverters, and motor control systems. Its design emphasizes very low switching and conduction losses, contributing to efficient power management in these systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter peak voltage (VCESM) is 850 V.
The continuous collector current (IC) is rated at 4 A.
The BUJD203AD is available in a DPAK surface-mountable package.
The storage temperature ranges from -65°C to 150°C, and the junction temperature is also rated up to 150°C.
Yes, it features an integrated anti-parallel E-C diode.