| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,945 pcs
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2945 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUJ403A is a silicon diffused power transistor manufactured by NXP Semiconductors. Designed for high-voltage and high-speed switching applications, this NPN transistor is planar-passivated and housed in a TO-220AB package.
Key electrical specifications include a maximum collector-emitter voltage (Vcesm) of 1200V and a continuous collector current (Ic) of 6A. The total power dissipation (Ptot) is rated at 100W at 25°C case temperature. It offers a typical collector-emitter saturation voltage (Vcesat) of 0.15V at 2A collector current and 0.4A base current.
Dynamic characteristics include a typical fall time (tf) of 170ns. The transistor is suitable for applications such as high-frequency electronic lighting ballasts, converters, inverters, switching regulators, and motor control systems. Its TO-220AB package facilitates easy mounting.
Thermal performance is supported by a junction-to-mounting base thermal resistance (Rth j-mb) of 1.25 K/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vcesm) for the BUJ403A is 1200V.
The BUJ403A has a continuous collector current (Ic) rating of 6A.
The total power dissipation (Ptot) for the BUJ403A is 100W at a case temperature of 25°C.
The typical collector-emitter saturation voltage (Vcesat) is 0.15V when the collector current is 2A and the base current is 0.4A.
The typical fall time (tf) for the BUJ403A is 170ns under the specified test conditions.
The storage temperature range for the BUJ403A is -65°C to 150°C.
The BUJ403A is supplied in a TO-220AB package.