| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,295 pcs
|
2295 pcs | On Request | 1 | On Request | On Request | 533 | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The BUH2M20AP from STMicroelectronics is a high voltage NPN silicon power transistor manufactured using Multiepitaxial Mesa technology. It is designed for cost-effective high performance and characterized for linear mode operation.
Key electrical specifications include an extra high voltage capability of 1200V and a current rating of 0.03A, with a power dissipation of 20000mW. The transistor also features low output capacitance.
This component is specifically designed for dynamic focus applications in CTV and monitor systems. It comes in a standard 3-pin TO-220AB package, suitable for through-hole mounting.
The BUH2M20AP offers a balance of performance and cost, making it suitable for demanding display applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BUH2M20AP transistor has a voltage rating of 1200V.
The BUH2M20AP has a current rating of 0.03A.
The power dissipation for the BUH2M20AP is 20000mW.
The BUH2M20AP is supplied in a TO-220AB package.
The BUH2M20AP is designed specifically for dynamic focus in CTV and monitor applications.