BUD42D NPN bipolar transistor with 350V collector-emitter sustaining voltage, 4A continuous collector current, and 25W power dissipation. Surface mount DPAK package.
Mfr Part #:

BUD42D

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor with 350V collector-emitter sustaining voltage, 4A continuous collector current, and 25W power dissipation. Surface mount DPAK package.
Total Stock: 5,000 pcs

BUD42D Available from 1 distributor

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5,000 pcs
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BUD42D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Case Code
Collector-Base Breakdown Voltage (VCBO)
Collector-Emitter Breakdown Voltage (VCES)
Current
DC Current Gain (Typical @ IC=0.3 A, VCE=1 V)
DC Current Gain (Typical @ IC=1 A, VCE=2 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Derate above 25°C
ESD Rating (HBM)
ESD Rating (MM)
Emitter-Base Voltage (VEBO)
Free-Wheeling Diode Built-In
Maximum Lead Temperature for Soldering
Mounting Type
Operating Temperature
Peak Base Current
Peak Collector Current
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BUD42D Description

Short technical summary and product information.

The BUD42D is a high speed, high gain NPN bipolar power transistor from On Semiconductor. It features a collector-emitter sustaining voltage (VCEO) of 350V, a collector-base breakdown voltage (VCBO) of 650V, and a continuous collector current rating of 4A (8A peak). The device dissipates up to 25W at case temperature 25°C, with a derating factor of 0.2 W/°C above 25°C. It includes a built-in free-wheeling diode and an antisaturation network for improved switching performance.

 

This transistor is designed for light ballast applications and other power switching circuits. It offers flat DC current gain across a range of collector currents, with typical hFE of 13 at 1A/2V and 16 at 0.3A/1V. The maximum VCE saturation voltage is 1V at 500mA base current and 2A collector current.

 

The BUD42D is available in a surface mount DPAK package (TO-252-3, Case 369C) and is also offered in an insertion mount version (BUD42D-1). The device is Pb-Free and RoHS compliant. Operating temperature range is -65°C to +150°C.

BUD42D Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BUD42D NPN Bipolar Transistor
Subcategory: Single BJT

BUD42D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

BUD42D Features

  • NPN bipolar transistor with 350V VCEO rating.
  • Continuous collector current of 4A (8A peak).
  • Power dissipation of 25W in DPAK package.
  • Built-in free-wheeling diode for inductive loads.
  • RoHS compliant and Pb-Free.

BUD42D Applications

  • Ideal for electronic light ballast circuits.
  • Suitable for power switching and inverter applications.
  • Used in high voltage DC-DC converters.
  • Can drive inductive loads with built-in diode.

BUD42D FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter sustaining voltage (VCEO) of the BUD42D?

350V.

What package does the BUD42D come in?

Surface mount DPAK (TO-252-3, DPak, SC-63).

What is the operating temperature range?

-65°C to +150°C.

Is the BUD42D RoHS compliant?

Yes, the device is RoHS compliant and Pb-Free.

What is the maximum collector current?

4A continuous, 8A peak.

Does the BUD42D have a built-in free-wheeling diode?

Yes, a free-wheeling diode is built-in.

What is the power dissipation rating?

25W at 25°C case temperature.

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