| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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The BUB941ZTT4 is an NPN Darlington transistor from STMicroelectronics designed for high-power switching applications. It features a collector-emitter breakdown voltage (Vceo) of 350V and a continuous collector current (Ic) rating of 15A, with a power dissipation (Pd) of 150W.
This Darlington configuration provides a high DC current gain (hFE) of 300 minimum at Ic=5A and Vce=10V, enabling efficient amplification with low base drive requirements. The collector-emitter saturation voltage (Vce sat) is 1.8V maximum at Ib=250mA and Ic=10A.
The device is housed in a TO-263-3 (D²Pak) surface-mount package with a supplier device package designation of D²PAK. It is rated for operation up to a junction temperature of 175°C.
The collector-emitter voltage (Vceo) is 350V.
The maximum continuous collector current (Ic) is 15A.
It is available in a TO-263-3 (D²Pak) surface-mount package, also known as D²PAK.
The maximum junction temperature is 175°C.
The RoHS status is listed as RoHS3 compliant, but this information is unverified.