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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,777 pcs
|
8777 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
28 pcs
|
28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Base Emitter Saturation Voltage (Maximum @ IC = 2 A, IB = 20 mA) | |
| Base Emitter Saturation Voltage (Maximum @ IC = 4 A, IB = 200 mA) | |
| Collector Cutoff Current (Maximum @ IB = 0, VCE = 400 V) | |
| Collector Cutoff Current (Maximum @ VBE = 0, VCE = 600 V) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 2 A, IB = 20 mA) | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 4 A, IB = 200 mA) | |
| Collector Peak Current (ICM) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Sustaining Voltage (VCEO(sus)) | |
| Current | |
| Diode Forward Voltage (VF) | |
| Emitter Cut-off Current (IEBO) | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (Typical @ VClamp = 250 V, IC = 2 A, IB 1 = 20 mA, VBE(off) = -5 V) | |
| Fall Time (Typical @ VClamp = 250 V, IC = 2 A, IB 1 = 20 mA, VBE(off) = -5 V, L = 500 µH) | |
| Fall Time (Typical @ VClamp = 250 V, IC = 7 A, IB 1 = 0.7 A, VBE(off) = -5 V, L = 500 µH) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature Range | |
| Storage Time (Typical @ VClamp = 250 V, IC = 2 A, IB 1 = 20 mA, VBE(off) = -5 V) | |
| Storage Time (Typical @ VClamp = 250 V, IC = 2 A, IB 1 = 20 mA, VBE(off) = -5 V, L = 500 µH) | |
| Storage Time (Typical @ VClamp = 250 V, IC = 7 A, IB 1 = 0.7 A, VBE(off) = -5 V, L = 500 µH) | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Transistor Type | |
| Turn-on Time (Resistive) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BU810 is a medium voltage NPN fast-switching Darlington transistor manufactured by STMicroelectronics. It is designed for high frequency and efficiency converters, switching regulators, and motor control applications. The device integrates an antiparallel collector-emitter diode and offers low base-drive requirements with fast switching speed.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 400V, collector-base voltage (VCBO) of 600V, and a continuous collector current rating of 7A with a peak capability of 10A. The transistor can dissipate up to 75W of power with a junction-to-case thermal resistance of 1.66°C/W. Saturation voltages are specified at multiple current levels, with VCE(sat) reaching a maximum of 3V at 7A collector current.
The BU810 is housed in a standard TO-220-3 through-hole package, suitable for PCB mounting with heatsinking. The device has a maximum junction temperature of 150°C and a storage temperature range of -65°C to 150°C. Switching performance is characterized with typical turn-on time of 0.6µs, storage time of 1.5µs, and fall time of 0.5µs under resistive load conditions.
The maximum collector-emitter voltage (VCEO) is 400V.
The maximum continuous collector current (IC) is 7A, with a peak current (ICM) of 10A.
The BU810 is available in a TO-220-3 through-hole package.
The maximum operating junction temperature is 150°C.
The maximum power dissipation (Ptot) is 75W at a case temperature of 25°C.
The RoHS status is listed as RoHS3 Compliant but is unverified.
Typical switching times under resistive load are: turn-on 0.6µs, storage 1.5µs, fall 0.5µs.