| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,777 pcs
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8777 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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28 pcs
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28 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BU810 is a medium voltage NPN fast-switching Darlington transistor manufactured by STMicroelectronics. It is designed for high frequency and efficiency converters, switching regulators, and motor control applications. The device integrates an antiparallel collector-emitter diode and offers low base-drive requirements with fast switching speed.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 400V, collector-base voltage (VCBO) of 600V, and a continuous collector current rating of 7A with a peak capability of 10A. The transistor can dissipate up to 75W of power with a junction-to-case thermal resistance of 1.66°C/W. Saturation voltages are specified at multiple current levels, with VCE(sat) reaching a maximum of 3V at 7A collector current.
The BU810 is housed in a standard TO-220-3 through-hole package, suitable for PCB mounting with heatsinking. The device has a maximum junction temperature of 150°C and a storage temperature range of -65°C to 150°C. Switching performance is characterized with typical turn-on time of 0.6µs, storage time of 1.5µs, and fall time of 0.5µs under resistive load conditions.
The maximum collector-emitter voltage (VCEO) is 400V.
The maximum continuous collector current (IC) is 7A, with a peak current (ICM) of 10A.
The BU810 is available in a TO-220-3 through-hole package.
The maximum operating junction temperature is 150°C.
The maximum power dissipation (Ptot) is 75W at a case temperature of 25°C.
The RoHS status is listed as RoHS3 Compliant but is unverified.
Typical switching times under resistive load are: turn-on 0.6µs, storage 1.5µs, fall 0.5µs.