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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17 pcs
|
17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Base Peak Current (Ibm) | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Peak Current (ICM) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Diode Forward Voltage (VF) | |
| Emitter-Base Voltage (VEBO) | |
| Insulation Withstand Voltage (Visol) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Storage Temperature Range (TSTG) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance, Junction-Case (RthJC) | |
| Transistor Type | |
| UL Compliant | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum @ Ic=5 A, Vce=5 V, Tj=100 °C) | |
| hFE (Minimum/Typical @ Ic=5 A, Vce=5 V) | |
| tf (Typical @ Vcc=150 V, Ic=5 A, Ib 1=0.5 A, Vbe(off)=-5 V) | |
| tf (Typical @ Vcc=150 V, Ic=5 A, Ib 1=0.5 A, Vbe(off)=-5 V, Tj=100 °C) | |
| ts (Typical @ Vcc=150 V, Ic=5 A, Ib 1=0.5 A, Vbe(off)=-5 V) | |
| ts (Typical @ Vcc=150 V, Ic=5 A, Ib 1=0.5 A, Vbe(off)=-5 V, Tj=100 °C) |
The BU808DFI is a high voltage fast-switching NPN power Darlington transistor manufactured by STMicroelectronics. It is a monolithic Darlington configuration with an integrated free-wheeling diode, designed for cost-effective high performance in power switching applications.
Key electrical specifications include a collector-emitter voltage (Vceo) of 700V, collector-base voltage (Vcbo) of 1400V, and a continuous collector current of 8A (10A peak). The DC current gain (hFE) is typically 230 at 5A, 5V, with a minimum of 60. Saturation voltages are low, with Vce(sat) typically 1.6V at 5A. The device offers fast switching with typical storage time of 3µs and fall time of 0.8µs.
The BU808DFI is specifically intended for horizontal deflection circuits in low-end TVs up to 21 inches. The integrated free-wheeling diode simplifies circuit design by eliminating the need for an external diode in inductive load switching.
The transistor is housed in a fully insulated ISOWATT-218-3 through-hole package, which is UL compliant for easy mounting without additional insulation. The package provides 2500V insulation withstand voltage from leads to heatsink. Thermal characteristics include a maximum power dissipation of 52W at case temperature 25°C and a junction-to-case thermal resistance of 2.4°C/W, with a maximum junction temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 300+ | $2.87 | $2.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) is 700V maximum, and the collector-base voltage (Vcbo) is 1400V maximum.
The BU808DFI is available in an ISOWATT-218-3 through-hole package.
The maximum junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.
The BU808DFI is listed as RoHS3 compliant, but this status is unverified.
The maximum continuous collector current is 8A, with a peak current of 10A (tp < 5ms).
The DC current gain is typically 230, with a minimum of 60 at Ic=5A, Vce=5V.
Typical storage time is 3µs and fall time is 0.8µs under test conditions Vcc=150V, Ic=5A, Ib1=0.5A, Vbe(off)=-5V.