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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The BU807 is an NPN Darlington transistor from On Semiconductor designed for high-current switching and linear amplification applications. It features a maximum collector-emitter breakdown voltage (VCEO) of 150V and a continuous collector current (IC) rating of 8A, with a power dissipation capability of 60W. The transistor offers a low Vce saturation voltage of 1.5V at a base current of 50mA and collector current of 5A, ensuring efficient operation in saturated switching modes.
Housed in a standard TO-220-3 through-hole package, the BU807 is suitable for easy mounting on printed circuit boards or heatsinks. The junction operating temperature is rated up to 150°C, providing reliable performance under thermal stress. As a Darlington configuration, it delivers high current gain, reducing the base drive requirements in driver circuits.
Typical applications include motor control, relay drivers, solenoid drivers, and power supply circuits where high current and voltage handling are required. The device is commonly used in industrial and consumer electronics for robust switching and amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1,200+ | $0.35 | $0.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (VCEO) is 150V.
The maximum continuous collector current (IC) is 8A.
The maximum power dissipation is 60W.
It comes in a TO-220-3 through-hole package.
The maximum junction operating temperature is 150°C.
The maximum Vce saturation is 1.5V at Ib=50mA and Ic=5A.
The RoHS status is listed as RoHS3 compliant, but this is unverified.