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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BU607D from STMicroelectronics is a silicon NPN power transistor engineered for demanding applications, particularly in the horizontal deflection output stages of televisions and cathode ray tubes (CRTs).
This transistor boasts a high collector-emitter voltage rating of 330V, ensuring robust performance in high-voltage environments. It features a fast switching speed, with a typical fall time of 0.75μs, enabling efficient operation in deflection circuits. The low saturation voltage, VCE(sat) of 1.0V maximum at 5A collector current, minimizes power loss and heat generation.
Key electrical characteristics include a continuous collector current of up to 7A and a peak collector current of 10A. The DC current gain (hFE) is typically 15 at 2A collector current and 5V collector-emitter voltage. The junction temperature is rated up to 150℃, and it can dissipate up to 60W of power at 25℃ case temperature.
The BU607D is suitable for applications requiring reliable high-voltage switching and fast response times. Its design focuses on efficiency and durability within its intended application scope.
| Qty | Low | High |
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| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BU607D has a collector-emitter voltage (VCEV) of 330V and a collector-emitter voltage (VCEO) of 150V.
The continuous collector current (IC) for the BU607D is rated up to 7A.
The BU607D has a fast switching speed with a fall time (tf) of 0.75μs maximum.
The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.0V at 5A collector current and 0.65A base current. The base-emitter saturation voltage (VBE(sat)) is a maximum of 1.3V under the same conditions.
The BU607D is designed for use in horizontal deflection output stages of TVs and CRT's.
The maximum junction temperature (TJ) for the BU607D is 150℃.
