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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BU508DW is a high voltage, high-speed switching NPN transistor manufactured by NXP Semiconductors. It is primarily designed for use in horizontal deflection circuits of color television receivers.
Key electrical specifications include a collector-emitter voltage peak (VCESM) of 1500V and a continuous collector current (IC) of 8A. The device can handle peak collector currents up to 15A. It has a maximum total power dissipation of 125W at 25°C.
Thermal characteristics are important for this device, with a junction to mounting base thermal resistance of 1 K/W and a junction to ambient thermal resistance of 45 K/W. The transistor operates within a storage temperature range of -65°C to 150°C and a junction temperature up to 150°C.
The BU508DW is housed in a SOT429 package, suitable for through-hole mounting. Its high-speed switching capabilities make it suitable for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage peak (VCESM) for the BU508DW is 1500 V.
The continuous collector current (IC) rating for the BU508DW is 8 A.
The maximum total power dissipation (Ptot) for the BU508DW is 125 W at 25°C.
The BU508DW transistor is supplied in a SOT429 package.