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BU508AW

The BU508AW is a Silicon NPN Power Transistor from NXP Semiconductors, designed for high switching speed applications. It features a collector-emitter voltage of 700V and a continuous collector current of 8A.

✓ Total Stock: 12 pcs

$ Price Range: $2.40

BU508AW Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	12 pcs On Request	12 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BU508AW Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	NXP Semiconductors

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BU508AW Description

Short technical summary and product information.

The BU508AW is a Silicon NPN Power Transistor manufactured by NXP Semiconductors. It is specifically designed for use in horizontal deflection circuits of color TV receivers, offering high switching speed.

Key electrical characteristics include a collector-emitter sustaining voltage (VCEO(SUS)) of 700V minimum and a maximum collector-emitter voltage (VCES) of 1500V. The continuous collector current (IC) is rated at 8A, with a peak collector current (ICM) of 15A. The device also features a continuous base current (IB) of 4A and a peak base current (IBM) of 6A.

Thermal specifications include a maximum collector power dissipation (PC) of 125W at 25℃ case temperature and a junction temperature (TJ) of 150℃. The thermal resistance from junction to case (Rth j-c) is 1.0℃/W. The transistor operates within a storage temperature range of -65℃ to 150℃.

Electrical measurements indicate a typical DC current gain (hFE) between 6 and 30 at IC=0.1A and VCE=5V. The output capacitance (COB) is 125pF at 0.1MHz, and the current-gain-bandwidth product (fT) is 7MHz. Switching characteristics include a storage time (tstg) of 6.5μs and a fall time (tf) of 0.7μs under specified test conditions.

BU508AW Quick Information

Product Type: NPN Power Transistor

Canonical Name: Silicon NPN Power Transistor BU508AW

Subcategory: NPN Power Transistor

BU508AW Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BU508AW Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BU508AW Features

Silicon NPN power transistor
High switching speed design
700V collector-emitter sustaining voltage
8A continuous collector current
125W power dissipation

BU508AW Applications

Suitable for high-voltage switching applications.
Used in horizontal deflection circuits of color TVs.
Ideal for power switching in industrial equipment.
Applicable in high-speed switching circuits.
Designed for use in high-voltage amplifier stages.

BU508AW FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter sustaining voltage of the BU508AW?

The collector-emitter sustaining voltage (VCEO(SUS)) is 700V minimum.

What is the maximum continuous collector current for the BU508AW?

The maximum continuous collector current (IC) is 8A.

What is the power dissipation of the BU508AW at 25℃?

The collector power dissipation (PC) is 125W at TC=25℃.

What is the typical DC current gain (hFE) of the BU508AW?

The typical DC current gain (hFE) is between 6 and 30 at IC=0.1A and VCE=5V.

What are the typical switching times for the BU508AW?

The typical storage time (tstg) is 6.5μs and the typical fall time (tf) is 0.7μs.

What is the RoHS status of the BU508AW?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BU508AW?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.