BU508AW NPN bipolar transistor rated for 700V collector-emitter voltage, 8A collector current, and 125W power dissipation. Housed in a TO-247-3 through-hole package.
Mfr Part #:

BU508AW

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
NPN bipolar transistor rated for 700V collector-emitter voltage, 8A collector current, and 125W power dissipation. Housed in a TO-247-3 through-hole package.
✓ Total Stock: 16,848 pcs
$ Price Range: $1.38 - $4.30

BU508AW Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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8,500 pcs
8500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,178 pcs
4178 pcs On Request 1 On Request On Request 18+ On Request On Request
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4,170 pcs
4170 pcs On Request 1 On Request On Request On Request On Request On Request

BU508AW Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BU508AW Description

Short technical summary and product information.

The BU508AW is an NPN bipolar junction transistor (BJT) designed for high-voltage switching and amplification applications. Manufactured by STMicroelectronics, this device features a maximum collector-emitter voltage (Vceo) of 700V, a continuous collector current (Ic) rating of 8A, and a power dissipation (Pd) of 125W. The DC current gain (hFE) is a minimum of 10 at Ic=100mA and Vce=5V, and the collector-emitter saturation voltage (Vce(sat)) is 1V maximum at Ib=1.6A and Ic=4.5A.

 

The transistor is packaged in a standard TO-247-3 case, which is a through-hole mounting package suitable for applications requiring efficient heat dissipation. The maximum junction temperature is 150°C. While specific transition frequency data is not provided in the available specifications, the device is suitable for power switching and linear applications where high voltage and moderate current are required.

 

Typical applications include power supply circuits, motor control, and general-purpose switching. The RoHS status is listed as compliant (unverified), and the MSL (Moisture Sensitivity Level) is 1 (Unlimited). Caution: Compliance data is unverified and should be confirmed from official sources.

BU508AW Quick Information

Product Type: Bipolar Transistor (BJT) - Single
Canonical Name: BU508AW NPN Bipolar Transistor, 700V Vceo, 8A Ic, TO-247-3
Subcategory: NPN Transistor

BU508AW Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BU508AW Estimated Pricing

Qty Low High
1+ $4.30 $4.30
10+ $2.75 $2.75
100+ $2.10 $2.10
600+ $1.95 $1.95
1,200+ $1.71 $1.71
3,000+ $1.52 $1.52
5,400+ $1.38 $1.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

BU508AW Features

  • NPN bipolar junction transistor design.
  • Rated for 700V collector-emitter voltage.
  • Handles 8A continuous collector current.
  • Supports 125W power dissipation.
  • Housed in TO-247-3 through-hole package.

BU508AW Applications

  • Used in power supply switching circuits.
  • Suitable for motor control applications.
  • Ideal for high-voltage linear regulators.

BU508AW FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BU508AW?

The maximum collector-emitter voltage (Vceo) is 700V.

What package is the BU508AW available in?

The BU508AW is available in a TO-247-3 through-hole package.

What is the maximum operating junction temperature?

The maximum junction temperature is 150°C.

Is the BU508AW RoHS compliant?

The BU508AW is listed as RoHS3 compliant, but this is unverified. Confirm with official documentation.

What is the maximum collector current?

8A continuous.

What is the power dissipation rating?

125W maximum.

What is the DC current gain (hFE) of this transistor?

Minimum hFE of 10 at Ic=100mA, Vce=5V.

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