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BU508AF NPN bipolar junction transistor with 700V collector-emitter breakdown voltage, 8A maximum collector current, and 50W power dissipation in a TO-3PF through-hole package.
Mfr Part #:

BU508AF

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
NPN bipolar junction transistor with 700V collector-emitter breakdown voltage, 8A maximum collector current, and 50W power dissipation in a TO-3PF through-hole package.
Total Stock: 6,528 pcs
$ Price Range: $1.28 - $4.11

BU508AF Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,528 pcs
6528 pcs On Request 1 On Request On Request 20+ On Request On Request

BU508AF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BU508AF Description

Short technical summary and product information.

The BU508AF is an NPN bipolar junction transistor manufactured by STMicroelectronics. It features a minimum collector-emitter breakdown voltage of 700V and a maximum collector current of 8A, making it suitable for high-voltage switching applications. The device can dissipate up to 50W of power and operates at a maximum junction temperature of 150°C.

 

Electrical characteristics include a DC current gain (hFE) of at least 10 at Ic=100mA and Vce=5V, and a maximum collector-emitter saturation voltage of 1V at Ib=1.6A and Ic=4.5A. These parameters support efficient switching performance in linear and switching circuits.

 

The transistor is housed in a TO-3P-3 Full Pack (TO-3PF) through-hole package, which provides robust thermal management and mechanical stability. The through-hole mounting type is suitable for traditional PCB assembly processes.

BU508AF Quick Information

Product Type: Bipolar Junction Transistor
Canonical Name: STMicroelectronics BU508AF NPN Bipolar Transistor
Subcategory: Single NPN

BU508AF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BU508AF Estimated Pricing

Qty Low High
1+ $4.11 $4.11
10+ $2.33 $2.33
100+ $1.85 $1.85
600+ $1.63 $1.63
1,200+ $1.33 $1.33
2,700+ $1.32 $1.32
5,100+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

BU508AF Features

  • NPN bipolar junction transistor design.
  • 700V minimum collector-emitter breakdown voltage.
  • 8A maximum collector current rating.
  • 50W maximum power dissipation capability.
  • TO-3PF through-hole package for thermal management.

BU508AF Applications

  • High-voltage switching power supplies.
  • Linear voltage regulator circuits.
  • Motor control and drive applications.

BU508AF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BU508AF?

The minimum collector-emitter breakdown voltage is 700V.

What is the maximum collector current of the BU508AF?

The maximum collector current is 8A.

What is the power dissipation rating of the BU508AF?

The maximum power dissipation is 50W.

What is the operating temperature range of the BU508AF?

The maximum junction temperature is 150°C.

What package does the BU508AF come in?

The BU508AF is available in a TO-3P-3 Full Pack (TO-3PF) through-hole package.

What is the DC current gain (hFE) of the BU508AF?

The minimum DC current gain is 10 at Ic=100mA and Vce=5V.

What is the collector-emitter saturation voltage of the BU508AF?

The maximum collector-emitter saturation voltage is 1V at Ib=1.6A and Ic=4.5A.

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