BU508A BU508A is a high voltage fast-switching NPN power transistor from STMicroelectronics. It features 700V collector-emitter voltage, 8A collector current, and 125W power dissipation in a TO-218 package.
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BU508A

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Mfr Name: STMicroelectronics
STMicroelectronics
BU508A is a high voltage fast-switching NPN power transistor from STMicroelectronics. It features 700V collector-emitter voltage, 8A collector current, and 125W power dissipation in a TO-218 package.
Total Stock: 24 pcs

BU508A Available from 1 distributor

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BU508A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Collector Cut-Off Current
Collector Peak Current
Collector-Emitter Voltage (VCES)
Current
Emitter Cut-off Current
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BU508A Description

Short technical summary and product information.

The BU508A is a high voltage fast-switching NPN power transistor manufactured by STMicroelectronics using Multiepitaxial Mesa technology with a Hollow Emitter structure to enhance switching speeds. It offers a collector-emitter voltage (VCEO) of 700V minimum and a collector-emitter voltage with base shorted (VCES) up to 1500V, making it suitable for high voltage applications.

 

The transistor can handle a DC collector current of 8A with a peak current of 15A (tp<5ms). Maximum power dissipation is 125W at case temperature 25°C. Key electrical characteristics include a collector-emitter saturation voltage of 1V max at 4.5A/2A and a transition frequency of 7MHz min.

 

Packaged in a TO-218 through-hole package, the BU508A is designed for easy mounting. Typical applications include horizontal deflection circuits in colour television sets and other high voltage switching power supplies.

BU508A Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single
Canonical Name: BU508A High Voltage Fast-Switching NPN Power Transistor
Subcategory: High Voltage Fast-Switching

BU508A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BU508A Features

  • Collector-emitter voltage rated at 700 V.
  • Collector current rating of 8 A.
  • Fast-switching NPN power transistor design.
  • Maximum power dissipation of 125 W.

BU508A Applications

  • Used in colour TV horizontal deflection.
  • Suitable for high voltage switching circuits.

BU508A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BU508A?

The BU508A has a VCEO of 700 V (minimum, IB=0) and a VCES of 1500 V (minimum, VBE=0).

What package is the BU508A available in?

The BU508A is specified in a TO-218 through-hole package per the datasheet. Some sources list a TO-247-3 package; verify the exact package with the manufacturer.

What is the maximum operating junction temperature?

The maximum junction temperature is 150 °C.

Is the BU508A RoHS compliant?

The BU508A is marked as RoHS3 compliant in existing data, but this is unverified. Please confirm with STMicroelectronics for definitive compliance.

What is the collector current rating?

The DC collector current rating is 8 A, with a peak current of 15 A (tp<5ms).

What is the transition frequency of the BU508A?

The transition frequency (fT) is minimum 7 MHz at IC=0.1A, VCE=5V, f=5MHz.

What are the saturation voltages for the BU508A?

The collector-emitter saturation voltage (VCE(sat)) is maximum 1 V at IC=4.5A, IB=2A. The base-emitter saturation voltage (VBE(sat)) is maximum 1.3 V under the same conditions.

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