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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Collector Cut-off Current (V_BE=0) | |
| Collector Peak Current (tp<5ms) | |
| Collector-Emitter Sustaining Voltage | |
| Collector-Emitter Voltage (V_BE=0) | |
| Current | |
| Emitter Cut-off Current (I_C=0) | |
| Emitter-Base Voltage (I_C=0) | |
| Fall Time | |
| Frequency | |
| Insulation Withstand Voltage (RMS) | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Storage Time | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BU508A is an NPN power transistor designed for high voltage fast-switching applications. It features a collector-emitter voltage (VCEO) of 700V and a collector-emitter voltage with base-emitter shorted (VCES) of 1500V. The continuous collector current is 8A with a peak current capability of 15A. Power dissipation is 125W at a case temperature of 25°C.
This transistor is housed in a TO-247-3 through-hole package, providing easy mounting and good thermal performance with a junction-to-case thermal resistance of 1°C/W. The device offers fast switching characteristics with a storage time of 7µs and a fall time of 550ns under inductive load conditions.
Typical applications include horizontal deflection circuits in color televisions, as well as other high voltage switching circuits such as power supplies and inverters. The BU508A is manufactured using Multiepitaxial Mesa technology with a Hollow Emitter structure to enhance switching speeds.
| Qty | Low | High |
|---|---|---|
| 50+ | $5.98 | $5.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 700V, and the maximum collector-emitter voltage with base-emitter shorted (VCES) is 1500V.
The continuous collector current (IC) is 8A, with a peak current (ICM) of 15A for pulses less than 5ms.
The BU508A is available in a TO-247-3 through-hole package.
The maximum operating junction temperature (Tj) is 150°C.
The RoHS status is listed as RoHS3 compliant but is unverified with low confidence due to source conflicts.
The maximum collector-emitter saturation voltage (VCE(sat)) is 1V at IC=4.5A and IB=2A.
Under inductive load conditions (IC=4.5A, hFE=2.5, VCC=140V), the storage time (ts) is 7µs and the fall time (tf) is 550ns.