BU508A NPN power transistor rated for 700V collector-emitter voltage and 8A collector current. Suitable for high voltage fast-switching applications.
Mfr Part #:

BU508A

Available from 1 distributors
Mfr Name: Motorola Semicondutor
Motorola Semicondutor
NPN power transistor rated for 700V collector-emitter voltage and 8A collector current. Suitable for high voltage fast-switching applications.
Total Stock: 6 pcs
$ Price Range: $5.98

BU508A Available from 1 distributor

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BU508A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Collector Cut-off Current (V_BE=0)
Collector Peak Current (tp<5ms)
Collector-Emitter Sustaining Voltage
Collector-Emitter Voltage (V_BE=0)
Current
Emitter Cut-off Current (I_C=0)
Emitter-Base Voltage (I_C=0)
Fall Time
Frequency
Insulation Withstand Voltage (RMS)
Military Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Storage Time
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BU508A Description

Short technical summary and product information.

The BU508A is an NPN power transistor designed for high voltage fast-switching applications. It features a collector-emitter voltage (VCEO) of 700V and a collector-emitter voltage with base-emitter shorted (VCES) of 1500V. The continuous collector current is 8A with a peak current capability of 15A. Power dissipation is 125W at a case temperature of 25°C.

 

This transistor is housed in a TO-247-3 through-hole package, providing easy mounting and good thermal performance with a junction-to-case thermal resistance of 1°C/W. The device offers fast switching characteristics with a storage time of 7µs and a fall time of 550ns under inductive load conditions.

 

Typical applications include horizontal deflection circuits in color televisions, as well as other high voltage switching circuits such as power supplies and inverters. The BU508A is manufactured using Multiepitaxial Mesa technology with a Hollow Emitter structure to enhance switching speeds.

BU508A Quick Information

Product Type: NPN Power Transistor
Canonical Name: BU508A NPN Power Transistor
Subcategory: High Voltage Fast-Switching Transistor

BU508A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BU508A Estimated Pricing

Qty Low High
50+ $5.98 $5.98

Estimated market price range - modelled values for guidance only, not live distributor offers.

BU508A Features

  • High voltage capability up to 1500V.
  • Collector current rating of 8A.
  • Fast switching with 550ns fall time.
  • Through-hole TO-247-3 package.
  • 125W power dissipation at 25°C.

BU508A Applications

  • Horizontal deflection in color TV.
  • High voltage switching power supplies.
  • Motor control circuits.
  • Inverter stages.

BU508A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 700V, and the maximum collector-emitter voltage with base-emitter shorted (VCES) is 1500V.

What is the collector current rating?

The continuous collector current (IC) is 8A, with a peak current (ICM) of 15A for pulses less than 5ms.

What package is this transistor available in?

The BU508A is available in a TO-247-3 through-hole package.

What is the operating junction temperature?

The maximum operating junction temperature (Tj) is 150°C.

Is this device RoHS compliant?

The RoHS status is listed as RoHS3 compliant but is unverified with low confidence due to source conflicts.

What is the collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage (VCE(sat)) is 1V at IC=4.5A and IB=2A.

What are the switching times?

Under inductive load conditions (IC=4.5A, hFE=2.5, VCC=140V), the storage time (ts) is 7µs and the fall time (tf) is 550ns.

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