| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
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| Tape & Reel |
The BU506DF is a transistor manufactured by NXP Semiconductors. A key feature of this component is its integrated efficiency diode, which can simplify circuit design and reduce component count.
This transistor is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for a wide range of environmental conditions. While specific electrical ratings such as voltage and current are not detailed here, its classification suggests suitability for current regulation applications within discrete semiconductor product systems.
Further details regarding its specific electrical characteristics, package type, and mounting considerations would typically be found in the manufacturer's datasheet. The BU506DF is listed alongside similar parts from NXP Semiconductors and other manufacturers, indicating its role in a broader ecosystem of power transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.13 | $2.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BU506DF transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BU506DF is 1 Unlimited.
Yes, the BU506DF has an integrated efficiency diode.