| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BU408D from ST is a silicon NPN power transistor engineered for demanding applications, particularly in the horizontal deflection output stages of televisions and CRT displays. This component boasts a high voltage rating, with a Collector-Emitter Voltage (VCEV) of up to 400V, ensuring robust performance in high-voltage circuits.
Key electrical characteristics include a continuous collector current of 7A and a peak collector current of 10A, supported by a base current capability of 4A. The transistor exhibits a low saturation voltage of 1.0V (max) at 6A and a fast fall time of 0.5μs (max), crucial for efficient switching operations. Its DC current gain (hFE) is a minimum of 15 at 2A and 5V.
With a power dissipation of 60W at 25℃ case temperature and a junction temperature limit of 150℃, the BU408D is built for thermal stability. The thermal resistance from junction to case is 2.08℃/W. Applications benefit from its high voltage capability and fast switching speed, making it suitable for power supply and deflection circuits where reliability and performance are paramount.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEV) for the BU408D is 400V.
The continuous collector current (IC) for the BU408D is rated at 7A.
The collector power dissipation (PC) for the BU408D at 25℃ is 60W.
The junction temperature (TJ) for the BU408D has a maximum limit of 150℃.
The thermal resistance (Rth j-c) from junction to case for the BU408D is 2.08℃/W.
The fall time (tf) for the BU408D is a maximum of 0.5μs.
