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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
58,632 pcs
|
58632 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
17,000 pcs
|
17000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
4,847 pcs
|
4847 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
1,081 pcs
|
1081 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BU406TU is an NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring medium power handling.
Electrically, the transistor features a maximum collector-emitter voltage (Vce) of 200V and a maximum continuous collector current (Ic) of 7A. It can dissipate up to 60W of power. The transition frequency (ft) is 10MHz, making it suitable for low to medium frequency operations. The saturation voltage (Vce(sat)) is 1V at Ib=500mA and Ic=5A.
The device is housed in a standard TO-220-3 through-hole package, which provides good thermal performance when mounted on a heatsink. The operating junction temperature is rated up to 150°C. Proper heatsinking is recommended for high-power dissipation scenarios.
200V
TO-220-3
150°C (TJ)
RoHS3 Compliant
7A
60W
10MHz