| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,470 pcs
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1470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BU406D from STMicroelectronics is a silicon NPN transistor specifically engineered for high-voltage and high-speed applications, particularly in the horizontal deflection output stages of TVs and CRTs. This component is housed in a standard TO-220 type package, facilitating through-hole mounting.
Key electrical characteristics include a collector-emitter sustaining voltage (VCEV) of 400V, a continuous collector current (IC) of 7A, and a peak collector current of 10A. The transistor exhibits a low saturation voltage (VCE(sat)) of 1V maximum at 5A and a fast switching speed with a fall time (tf) of 0.75µs maximum. The DC current gain (hFE) is typically 15 at 2A.
With a total power dissipation of 60W at 25°C and an operating junction temperature up to 150°C, the BU406D is suitable for demanding power applications. Its thermal resistance from junction to case is 2.08°C/W.
This transistor is designed for applications requiring robust performance in high-voltage switching environments. Its specifications make it a reliable choice for power amplification and switching circuits where high voltage handling and fast response times are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter sustaining voltage (VCEV) is 400V.
The maximum continuous collector current (IC) is 7A.
The BU406D is available in a TO-220 type package.
The typical DC current gain (hFE) is 15 at IC = 2A and VCE = 5V.
The maximum fall time (tf) is 0.75µs.