| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,300 pcs
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2300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BU406D from BANEASA is a Silicon NPN Transistor designed for high-voltage, high-speed horizontal deflection output stages in TVs and CRTs. It is housed in a TO-220 type package, suitable for through-hole mounting.
Key electrical specifications include a Collector-Emitter Sustaining Voltage of 400V (VCEV), a maximum Collector Current of 7A continuous and 10A peak, and a maximum Total Power Dissipation of 60W at 25°C. The transistor exhibits a low saturation voltage of 1V (VCE(sat) Max) at 5A and a fast switching speed with a Fall Time of 0.75µs (Max).
Thermal characteristics include a Junction-to-Case thermal resistance of 2.08°C/W and an operating junction temperature up to 150°C. The storage temperature range is from -65°C to +150°C.
This transistor is suitable for power amplification and switching applications requiring high voltage handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Sustaining Voltage (VCEV) is 400V.
The maximum continuous collector current (IC) is 7A.
The BU406D comes in a TO-220 type package.
The maximum operating junction temperature (TJ) is 150°C.
The Collector-Emitter Saturation Voltage (VCE(sat)) is a maximum of 1V at IC = 5A.
The fall time (tf) is a maximum of 0.75µs.