| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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360 pcs
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360 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BU326S is a silicon multiepitaxial NPN transistor manufactured by ST, housed in a Jedec TO-3 metal case. It is specifically designed for switch-mode CTV applications.
Key electrical characteristics include a collector-emitter voltage of 800V (V_BE=0) and 400V (I_B=0), a continuous collector current of 6A, and a peak collector current of 8A. The device also offers a maximum power dissipation of 60W at T_case < 75°C.
Thermal data indicates a junction-to-case thermal resistance of 1.67°C/W. The transistor operates within a storage temperature range of -65 to 175°C and has a junction temperature limit of 175°C.
Mechanical data specifies the TO-3 package with dimensions in millimeters. The collector is connected to the case.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V_BE = 0) for the BU326S is 800 V.
The continuous collector current for the BU326S is rated at 6 A.
The BU326S transistor comes in a TO-3 metal case package.
The thermal resistance junction-to-case for the BU326S is a maximum of 1.67 °C/W.
The storage temperature range for the BU326S is -65 to 175 °C.