| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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265 pcs
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265 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BU326 is a silicon NPN power transistor manufactured by Thomson-CSF. It is designed for high voltage and high speed operation, featuring a low collector saturation voltage. This transistor is intended for use in the chopper supplies of CTV receivers.
The BU326 comes in a TO-3 package and offers a collector-base voltage of up to 800V (BU326) or 900V (BU326A) and a collector-emitter voltage of up to 375V (BU326) or 400V (BU326A). It can handle a continuous collector current of 6A and a peak collector current of 8A. The total power dissipation is rated at 75W at 25°C case temperature.
Key electrical characteristics include a DC current gain (hFE) of at least 25 at 1A/5V and a transition frequency (fT) of 4MHz at 0.2A/10V. Switching times are also specified, with a turn-on time of 0.5µs, storage time of 3.5µs, and fall time of 0.5µs under specific test conditions.
The operating temperature range for the junction is from -65°C to 200°C, and the storage temperature range is also -65°C to 200°C. The thermal resistance from junction to case is 2.33°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (VCBO) for the BU326 is 800V when the emitter is open.
The maximum collector-emitter voltage (VCEO) for the BU326 is 375V when the base is open.
The continuous collector current (IC) for the BU326 is rated at 6A.
The total power dissipation (PT) for the BU326 is 75W at a case temperature of 25°C.
The junction temperature (Tj) for the BU326 ranges from -65°C to 200°C.
The thermal resistance junction to case (Rth j-C) for the BU326 is 2.33°C/W.
The DC current gain (hFE) for the BU326 is a minimum of 25 when measured at IC=1A and VCE=5V.