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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BU2525DF is a Silicon Diffused Power Transistor manufactured by NXP Semiconductors. It is an NPN type transistor designed for high-voltage and high-speed switching applications, particularly in the horizontal deflection circuits of large screen color television receivers up to 32 kHz.
Key electrical specifications include a maximum collector current of 12A and a collector-emitter voltage of 800V. The device can handle peak collector currents of up to 30A and has a maximum power dissipation of 45W at 25°C heatsink temperature. The collector-emitter saturation voltage is a maximum of 5V at 8.0A collector current and 1.6A base current.
This transistor is housed in a plastic full-pack envelope, specifically the SOT199 package. Its thermal resistance from junction to heatsink without compound is typically 3.7 K/W, and with compound, it is typically 2.8 K/W. The junction temperature is rated up to 150°C.
The BU2525DF also features an integrated damper diode, contributing to its suitability for demanding deflection circuit applications. Its high-speed switching capability and robust power handling make it a reliable component for television receiver designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (DC) for the BU2525DF is 12A.
The collector-emitter voltage (open base) for the BU2525DF is 800V.
The total power dissipation for the BU2525DF is a maximum of 45W at a heatsink temperature less than or equal to 25°C.
The BU2525DF transistor is supplied in the SOT199 package.
The maximum operating temperature for the BU2525DF is 150°C.