LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BU2525AF from NXP Semiconductors is a new generation, high-voltage, high-speed switching NPN transistor. It is housed in a plastic full-pack envelope and is specifically intended for use in horizontal deflection circuits of large screen color television receivers up to 32 kHz.
Key electrical specifications include a collector-emitter voltage peak value (Vcesm) of 1500V and a continuous collector current (Ic) of 12A. The total power dissipation (Ptot) is rated at 45W at a heatsink temperature of 25°C. The transistor exhibits a collector-emitter saturation voltage (Vce sat) of 5V at 8.0A collector current and 1.6A base current, and a fall time (tf) of 0.35μs under specified conditions.
Thermal performance is characterized by a junction-to-heatsink thermal resistance of 3.7 K/W without heatsink compound and 2.8 K/W with compound. The junction-to-ambient thermal resistance in free air is 35 K/W.
The transistor is packaged in a SOT-199 (full-pack) case, suitable for through-hole mounting. It is designed for applications requiring high voltage and fast switching capabilities, such as in television deflection systems.
| Qty | Low | High |
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| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the BU2525AF is 800V, with a peak value (Vcesm) of 1500V.
The continuous collector current (Ic) for the BU2525AF is 12A.
The total power dissipation (Ptot) for the BU2525AF is 45W at a heatsink temperature of 25°C.
The BU2525AF transistor is supplied in a SOT-199 (full-pack) package.
