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19 pcs
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19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BU2508DF is an NPN Power Transistor manufactured by NXP Semiconductors, specifically designed for use in the horizontal deflection circuits of color television receivers. This component offers a high switching speed and includes a built-in damper diode for enhanced performance and protection.
Key electrical characteristics include a Collector-Emitter Sustaining Voltage (VCEO(SUS)) of 700V minimum, a continuous Collector Current (IC) of 8A, and a peak Collector Current (ICM) of 15A. The device can dissipate up to 45W of power at 25℃ (TC). Its saturation voltage (VCE(sat)) is 1.0V maximum at 4.5A, and the base-emitter saturation voltage (VBE(sat)) is 1.1V maximum under the same conditions.
With a high Collector-Emitter Voltage (VCES) of 1500V and a Collector-Emitter Voltage (VCEO) of 700V, the BU2508DF is suitable for high-voltage applications. The junction temperature can reach up to 150℃, with a storage temperature range of -65℃ to 150℃. The thermal resistance from junction to case is 2.8℃/W.
This transistor is designed for applications requiring robust performance in deflection systems. Its specifications make it a reliable choice for television manufacturers seeking efficient and durable components for their products.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Sustaining Voltage (VCEO(SUS)) is 700V minimum.
The maximum continuous Collector Current (IC) is 8A.
The maximum Collector Power Dissipation (PC) at 25℃ is 45W.
The typical Collector-Emitter Saturation Voltage (VCE(sat)) is 1.0V at IC=4.5A and IB=1.12A.
The typical DC Current Gain (hFE) at IC=1A and VCE=5V is 13.
The typical Fall Time (tf) is 0.6μs.
