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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BU208 from Siemens is a high-voltage NPN silicon power transistor manufactured using a multiepitaxial mesa process. It is specifically designed for applications requiring fast switching, such as horizontal deflection circuits in color televisions.
Key electrical characteristics include a maximum Collector-Emitter Voltage (V_CES) of 1500V and a Collector-Emitter Voltage (V_CEO) of 700V. The continuous collector current (I_C) is rated at 8.0A, with a peak collector current (I_CM) of 15A. Power dissipation (P_D) is 150W at 25°C.
This transistor operates within a junction temperature range of -65 to +175°C. The TO-3 case package is suitable for power applications. The BU208 is designed for reliable performance in demanding electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V_CES) is 1500V at 25°C.
The continuous collector current (I_C) is 8.0A at 25°C.
The maximum power dissipation is 150W at 25°C case temperature.
The operating and storage junction temperature range is -65°C to +175°C.
The BU208 is available in a TO-3 metal package.
The typical transition frequency (fT) is 7.0 MHz at V_CE=5V, I_C=100mA.
For the BU208, the maximum V_CE(SAT) is 5.0V at I_C=4.5A, I_B=2.0A. For the BU208A variant, it is 1.0V.