Mfr Part #:

BU126

Mfr Name: ITT Cannon

The BU126 is an NPN Power Transistor from ITT Cannon, designed for voltage regulator and power supply applications. It features a high breakdown voltage and is housed in a TO-3 package.

✓ Total Stock: 3 pcs

$ Price Range: $0.22

BU126 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	3 pcs On Request	3 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BU126 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	ITT Cannon
Junction Temperature	125°C
Storage Temperature	-65~125°C

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BU126 Description

Short technical summary and product information.

The BU126 is a silicon NPN power transistor manufactured by ITT Cannon. It is designed for applications such as voltage regulators, inverters, and switching mode power supplies. The transistor features a high breakdown voltage, with a Collector-Base voltage (VCBO) of 750V and a Collector-Emitter voltage (VCEO) of 300V.

Key electrical characteristics include a maximum continuous Collector Current (IC) of 3.0A and a peak Collector Current (ICM) of 6.0A. The Base Current (IB) is rated up to 2.0A. Power dissipation (PT) is 40W at a case temperature of 25°C. The device has a Junction Temperature (Tj) limit of 125°C and a Storage Temperature (Tstg) range of -65°C to 125°C.

Thermal characteristics include a Thermal Resistance Junction-to-Case (Rth j-C) of 2.5 K/W. The transistor is housed in a TO-3 package, suitable for power applications requiring efficient heat dissipation.

Additional specifications include a Collector-Emitter Sustaining Voltage (VCEO(SUS)) of 300V, an Emitter-Base Breakdown Voltage (V(BR)EBO) of 6V, and various saturation voltage ratings. The DC Current Gain (hFE) is a minimum of 15 at 1A and 5V. Output Capacitance (COB) is 75pF, Transition Frequency (fT) is 10MHz, and Fall Time (tf) is 0.2µs.

BU126 Quick Information

Product Type: NPN Power Transistor

Canonical Name: BU126 NPN Power Transistor

Subcategory: NPN

BU126 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BU126 Estimated Pricing

Qty	Low	High
1+	$0.22	$0.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

BU126 Features

High breakdown voltage up to 750V.
Continuous collector current of 3A.
Suitable for power supply applications.
Housed in a TO-3 package.
NPN silicon power transistor.

BU126 Applications

Suitable for high-voltage switching applications.
Used in power regulation and inverter circuits.
Ideal for voltage regulator and power supply modules.
Applicable in switching mode power supplies.
Suitable for high-current transistor switching.

BU126 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum Collector-Base voltage (VCBO) for the BU126 transistor?

The maximum Collector-Base voltage (VCBO) for the BU126 transistor is 750V.

What is the maximum Collector-Emitter voltage (VCEO) of the BU126?

The maximum Collector-Emitter voltage (VCEO) of the BU126 is 300V.

What is the continuous collector current (IC) rating for the BU126?

The continuous collector current (IC) rating for the BU126 is 3.0A.

What is the package type for the BU126 transistor?

The BU126 transistor is supplied in a TO-3 package.

What is the maximum junction temperature for the BU126?

The maximum junction temperature (Tj) for the BU126 is 125°C.