| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
56 pcs
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56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BU126 from MTC is a Silicon NPN Power Transistor housed in a TO-3 package. It is designed for applications such as voltage regulators, inverters, and switching mode power supplies.
Key electrical characteristics include a high collector-base voltage rating of 750V and a collector-emitter voltage rating of 300V. The continuous collector current is rated at 3.0A, with a peak current of 6.0A. The device also offers a DC current gain (hFE) of 15 at 1A and 5V.
Thermal performance is supported by a total power dissipation of 40W at 25°C case temperature and a thermal resistance junction-to-case of 2.5 K/W. The junction temperature is rated up to 125°C.
This transistor is suitable for various power electronics designs requiring robust voltage and current handling capabilities within its specified limits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (VCBO) for the BU126 is 750V.
The maximum collector-emitter voltage (VCEO) for the BU126 is 300V.
The continuous collector current (IC) for the BU126 is 3.0A.
The peak collector current (ICM) for the BU126 is 6.0A.
The total power dissipation (PT) for the BU126 at 25°C is 40W.
The junction temperature (Tj) for the BU126 ranges from -65°C to 125°C.
The minimum DC current gain (hFE) of the BU126 at IC=1A and VCE=5V is 15.