| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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26 pcs
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26 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Tape & Reel |
The Infineon BTS441RGATMA1 is a single-channel smart power high-side switch built using Smart SIPMOS technology. It is designed for microcontroller-compatible power switching in 5V, 12V, and 24V DC systems.
Key electrical characteristics include a maximum on-state resistance of 20 mOhm at 150°C, an operating voltage range of 4.75V to 41V, a nominal load current of 21A, and a current limitation of 65A. The device features N-channel vertical power FET with a charge pump and ground-referenced CMOS-compatible input.
Integrated protection functions include short circuit protection, current limitation, overload protection, thermal shutdown, overvoltage protection, reverse battery protection, loss of ground protection, and ESD protection. Diagnostic functions provide feedback with an open-drain output, including open load detection in the OFF-state and thermal shutdown feedback in the ON-state.
This switch is suitable for various load types, including resistive, inductive, and capacitive loads, and is particularly useful for loads with high inrush currents like lamps. It replaces electromechanical relays, fuses, and discrete circuits. The component is supplied in a PG-TO263-5 surface-mount package and is AEC qualified.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.01 | $5.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum on-state resistance is 20 mOhm at Tj = 150 °C.
The operating voltage range is 4.75 V to 41 V.
The nominal load current is 21 A.
It includes short circuit protection, current limitation, overload protection, thermal shutdown, overvoltage protection, reverse battery protection, loss of ground protection, and ESD protection.
The BTS441RGATMA1 is supplied in a PG-TO263-5 package.
Yes, the BTS441RGATMA1 is AEC Qualified.