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20,000 pcs
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20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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The Infineon Technologies BTS3410GXUMA1 is an N-channel vertical power FET in Smart SIPMOS technology, functioning as a low-side power switch. It is designed for 12V DC applications and can replace electromechanical relays and discrete circuits.
Key electrical specifications include a drain-source voltage of 42V, a nominal load current of 1.3A, and a typical on-state resistance of 150mOhm. The device features integrated protection functions such as overload protection, short circuit protection, overvoltage protection, current limitation, and thermal shutdown with auto-restart.
This HITFET device is suitable for switching or linear applications with resistive, inductive, and capacitive loads. It offers logic-level input and input protection (ESD). The BTS3410GXUMA1 is housed in a PG-DSO-8 package, suitable for surface mounting.
Applications include various automotive electronics and industrial control systems requiring reliable power switching with built-in protection.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 42V.
The nominal load current is 1.3A.
The typical on-state resistance is 150mOhm.
The operating temperature range is -40°C to 150°C.
The BTS3410GXUMA1 is in a PG-DSO-8 package, which is an 8-SOIC (0.154", 3.90mm Width) suitable for surface mounting.
Yes, the BTS3410GXUMA1 features auto-restart with thermal shutdown.