| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
880 pcs
|
880 pcs | On Request | 1 | On Request | On Request | 2012 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon BTS282Z is an N-Channel enhancement mode MOSFET designed for high current switching applications. It features a drain-source voltage rating of 49V and a continuous drain current of 80A at case temperature of 100°C with 4.5V gate drive. Pulsed drain current capability reaches 320A.
This MOSFET offers low on-resistance of 6.5mΩ typical at VGS=10V and 9.5mΩ maximum at VGS=4.5V. Gate threshold voltage ranges from 1.2V to 2V. Input capacitance is 4800pF maximum at VDS=25V. Total gate charge is 232nC at VGS=10V, enabling efficient high-frequency switching.
The device is avalanche rated with single pulse avalanche energy of 2J. Thermal resistance from junction to case is 0.5 K/W maximum. It includes an integrated temperature sensing diode for overtemperature protection. Operating junction temperature range is -40°C to 175°C.
The BTS282Z is housed in a P-TO220-7-180 package with through-hole mounting. It supports logic level input and can be driven by 4.5V or 10V gate voltages.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.94 | $1.94 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating junction temperature range is -40°C to 175°C.
The BTS282Z is available in a P-TO220-7-180 through-hole package.
The BTS282Z is listed as RoHS3 compliant and REACH unaffected, though this data is unverified.
The maximum drain-source voltage (VDS) is 49V.
Typical on-resistance is 5.8mΩ at VGS=10V and 8.2mΩ at VGS=4.5V.
Gate threshold voltage ranges from 1.2V (minimum) to 2V (maximum), with a typical value of 1.6V.
Continuous drain current is 80A at Tc=100°C with VGS=4.5V. Pulsed drain current is 320A.