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4,512 pcs
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4512 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies BTS133 is a smart N-channel vertical power FET designed for low-side switching applications. It is suitable for driving resistive, inductive, and capacitive loads in both switching and linear modes, making it ideal for 12V and 24V DC systems.
Key electrical specifications include a 60V drain-source voltage, a nominal load current of 7A, and a current limit of 21A. The device features an on-state resistance of 50 mΩ (typical) and an input threshold voltage ranging from 1.3V to 2.2V. It also provides integrated protection functions such as thermal shutdown with latch, short circuit and overload protection, and overvoltage protection.
This HITFET™ switch is AEC qualified and comes in a TO-220-3 package suitable for through-hole mounting. The operating temperature range is -40°C to 150°C. Its design allows it to replace electromechanical relays and discrete circuits in various applications.
The BTS133 offers features like logic-level input, input protection (ESD), and status feedback capability. It is a green product, compliant with RoHS standards.
| Qty | Low | High |
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| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BTS133 has a maximum drain-source voltage of 60V, with a clamp voltage ranging from 60V to 73V.
The nominal load current is 7A, with a current limit of 21A.
The typical on-state resistance is 50mΩ (also specified as 40mΩ typical).
The device operates over a junction temperature range of -40°C to 150°C.
The BTS133 is available in a PG-TO220-3-1 package (TO-220-3) with through-hole mounting.
Yes, the BTS133 provides load dump protection up to 90V (at VA=13.5V, td=400ms, RI=2Ω, ID=0.5*7A) and 74V (at ID=7A).
The BTS133 is rated for 3000V ESD per the Human Body Model (MIL STD 883D, method 3015.7).